| PART |
Description |
Maker |
| APT50GS60BR APT50GS60SR APT50GS60SRG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
| SGP20N60HS09 SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
http://
Infineon Technologies AG
|
| SGP30N60HS SGP30N60HS09 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SIGC42T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling
|
Infineon Technologies AG
|
| IXDN75N120 L209 |
High Voltage IGBT
IGBT Discretes: NPT IGBT
From old datasheet system
High Voltage IGBT 150 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 S |
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技
IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology
1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
| SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
